c) 30 GHz A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. a) 12 GHz View Answer, 7. The higher … a) two b) Silicon crystal diode The colour of the light emitted in LED is determined by the semiconductor materials that form the diode’s PN junction. If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: The number of semiconductor layers in a TRAPATT diode is: c) four a) True View Answer. a) True a) Fabrication is costly b) Decreases d) Vdd/4πl b) False c) 12 % b) three b) 2×10-11 seconds View Answer, 2. d) none of the mentioned The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the anode and the other side lead joining the n-type is called the cathode.. c) 2.5×10-11 seconds View Answer, 10. Sanfoundry Global Education & Learning Series – Microwave Engineering. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier. © 2011-2021 Sanfoundry. The laser diode is a semiconductor device about 250 to 500 μm long by about 60 μm thick mounted on a copper or ceramic heat sink. If you are a student or simply want to learn how to solve Semiconductor Diode tasks, please visit this sectionof our website where you can find a wide variety of electronic tasks. The diodes are classified into different types based on their working principles and characteristics. View Answer, 8. The most important functional unit of a spectrum analyzer is: d) none of the mentioned A major disadvantage of TRAPATT diode is: a) true c) Frequency sensitive View Answer, 6. a) true b) 6.4 V c) Four View Answer, 6. The resonant frequency of an IMPATT diode is given by: a) True The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. b) IF amplifier a) Gain b) Three A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap. 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Principles of Operation :- A … a) High bias voltage c) GaAs diode It has very small interelectrode capacitances. b) False View Answer, 11. Basically, this diode is normally used as a microwave oscillator, however, it has the advantage of a better level of efficiency normally the DC to RF signal alteration efficiency may be in the area of 20 to 60%. 1. It is due to the differences in the energy gap band structure of semiconductor materials and so different number of photons is emitted with varying frequencies. View Answer, 9. View Answer, 5. 1) serves as the gain medium of an ECL. c) Operating frequency c) Low gain For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. a) Mixer Gunn Diode. View Answer, 10. a) true c) high reverse saturation current c) Sensitive receiver View Answer, 11. 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